产品特性:低栅极电荷 | 品牌:Fet/东沅 | 型号:FKL0006 |
封装:SOT223 | 批号:24+ | FET类型:N通道MOS管 |
漏源电压(Vdss):100V | 漏极电流(Id):3A | 漏源导通电阻(RDS On):75mΩ |
栅源电压(Vgs):±20A | 栅极电荷(Qg):24.9nC | 反向恢复时间:23.8ns |
最大耗散功率:62.5mW | 配置类型:沟槽型 | 工作温度范围:-55 to 150 ℃ |
安装类型:表面贴装式 | 应用领域:汽车电子、 智能家居、 家用电器、 照明电子、 3C数码、 可穿戴设备 | 数量:100000 |
QQ:1186670662 | 资质:代理 | 货源:原厂 |
可售卖地:全国 |
深圳市科瑞芯电子是Fet/东沅的供应商,商品原厂原装
供应N沟道快速开关MOSFET,可为终端客户提供样品及技术支持!
由于电子行情价格波动大,无法实时更新价格, 下单时请先咨询客服~
型号:FKL0006
封装:SOT223
类型:N通道MOS管
品牌:Fet/东沅
温馨提示:公司产品丰富,如想求购具体型号可直接致电或QQ联系!
Description
The FKL0006 is the high cell density trenchedN-ch MOSFETs, which provides excellentRDSON and efficiency for most of the smallpower switching and load switch applications.The FKL0006 meets the RoHS and GreenProduct requirement with full functionreliability approved.
Features
● Green Device Available
● Super Low RDS(ON)
● Excellent CdV/dt effect decline
● Advanced high cell density Trenchtechnology
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
● Drain-Source Breakdown Voltage: 100V
● Temperature Coefficient Reference: 0.082V/℃
● Static Drain-Source On-Resistance
VGS=10V , ID=3A: 60~75mΩ
VGS=4.5V , ID=2A: 65~82mΩ
● Gate Threshold Voltage: 1.2~2.5V
● Temperature Coefficient: -4.8mV/℃
● Drain-Source Leakage Current
VDS=80V , VGS=0V , TJ=25℃: 1uA
VDS=80V , VGS=0V , TJ=55℃: 5uA
● Gate-Source Leakage Current: ±100nA
● Forward Transconductance: 5.8S
● Gate Resistance: 1.4~2.8Ω
● Total Gate Charge : 40~56nC
● Gate-Source Charge: 7.3~10.2nC
● Gate-Drain Charge: 7~9.8nC
● Turn-On Delay Time: 9.2~18.4ns
● Rise Time: 22~40ns
● Turn-Off Delay Time: 41~82ns
● Fall Time: 19.6~39ns
● Input Capacitance: 2400~3360pF
● Output Capacitance: 100~140pF
● Reverse Transfer Capacitance: 82~115pF
产品规格书(部分),如需PDF文档请QQ索要或电话联系
科瑞芯电子秉持[追求品质、专*业诚信、持续创*新]的理念,为客户提供工业标品质、低成*本的半导体件,提供专*业技术支援及完*整的解决方案。持续追求、不断创*新以及提供更佳更广的准、高服务,协助客户及厂商提高竞争能力,致力于成为电子半导体通路商之一。