产品特性:低栅极电荷 | 品牌:Fet/东沅 | 型号:FKN2643 |
封装:SOT23 | 批号:24+ | FET类型:参考规格书 |
漏源电压(Vdss):-20V | 漏极电流(Id):-3A | 漏源导通电阻(RDS On):100mΩ |
栅源电压(Vgs):±20V | 栅极电荷(Qg):12.5nC | 反向恢复时间:34ns |
最大耗散功率:参考规格书mW | 配置类型:参考规格书 | 工作温度范围:-55 to 150℃ |
安装类型:参考规格书 | 应用领域:汽车电子、 智能家居、 家用电器、 照明电子、 3C数码、 物联网IoT、 可穿戴设备 | 数量:20000 |
QQ:1186670662 | 资质:代理 | 货源:原厂 |
可售卖地:全国 |
东沅(Fetek)FKN2643,P沟道20V快速开关MOSFET,封装SOT23
深圳市科瑞芯电子有限公司常备料!欢迎致电咨询!!!
产品说明
Description
The FKN2643 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.The FKN2643 meet the RoHS and Green Productre quirement with full function reliability approved.
Features
● Super Low Gate Charge
● Green Device Available
● Excellent Cdv/dt effect decline
● Advanced high cell density Trenchtechnology
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
● Drain-Source Breakdown Voltage: -20V
● Static Drain-Source On-Resistance
VGS=-4.5V , ID=-3A: 100mΩ
VGS=-2.5V , ID=-2A: 120mΩ
● Gate Threshold Voltage: -0.3V -0.5V -1.0V
● Drain-Source Leakage Current
VDS=-16V , VGS=0V , TJ=25℃: -1uA
VDS=-16V , VGS=0V , TJ=55℃: -5uA
● Gate-Source Leakage Current: ±100nA
● Forward Transconductance: 12.2S
● Total Gate Charge : 10.1nC
● Gate-Source Charge: 1.21nC
● Gate-Drain Charge: 2.46nC
● Turn-On Delay Time: 5.6ns
● Rise Time: 32.2ns
● Turn-Off Delay Time: 45.6ns
● Fall Time: 29.2ns
● Input Capacitance: 677pF
● Output Capacitance: 82pF
● Reverse Transfer Capacitance: 73pF
产品规格书(部分),如需PDF文档请QQ索要或电话联系
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